參數(shù)資料
型號： MX29LV640BBXBC-12
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝： 11 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP-63
文件頁數(shù)： 20/69頁
文件大?。?/td> 519K
代理商： MX29LV640BBXBC-12
20
P/N:PM1076
REV. 1.2, SEP. 07, 2005
MX29LV640BT/BB
FACTORY LOCKED:Secured Silicon Sector
Programmed and Protected At the Factory
In device with an ESN, the Secured Silicon Sector is
protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any
way. A factory locked device has an 8-word random ESN
at address 3FFF70h-3FFF77h (for MX29LV640BT) or
000000h-000007h (for MX29LV640BB).
CUSTOMER LOCKABLE:Secured Silicon
Sector NOT Programmed or Protected At the
Factory
As an alternative to the factory-locked version, the device
may be ordered such that the customer may program
and protect the 128-word Secured Silicon Sector.
Programming and protecting the Secured Silicon Sector
must be used with caution since, once protected, there
is no procedure available for unprotected the Secured
Silicon Sector area and none of the bits in the Secured
Silicon Sector memory space can be modified in any
way.
The Secured Silicon Sector area can be protected using
one of the following procedures:
Write the three-cycle Enter Secured Silicon Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 14, except
that RESET# may be at either VIH or VID. This allows in-
system protection of the Secured Silicon Sector without
raising any device pin to a high voltage. Note that method
is only applicable to the Secured Silicon Sector.
Write the three-cycle Enter Secured Silicon Sector Region
command sequence, and then alternate method of sector
protection described in the :Sector Group Protection and
Unprotect" section.
Once the Secured Silicon Sector is programmed, locked
and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to
reading and writing the remainder of the array.
相關(guān)PDF資料
PDF描述
MX29LV640BTC-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-12G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV640EBTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70G 功能描述:IC FLASH PAR 64MB 70NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70GTR 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 70 ns Parallel Flash - TFBGA-48
MX29LV640EBXEI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 90 ns Parallel Flash - TFBGA-48
MX29LV640ETTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
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