參數(shù)資料
型號(hào)： MX29F100TTA-90
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類(lèi)： DRAM
英文描述： 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
中文描述： 64K X 16 FLASH 5V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
文件頁(yè)數(shù)： 30/47頁(yè)
文件大?。?/td> 706K
代理商： MX29F100TTA-90
30
P/N:PM0548
MX29F100T/B
REV. 1.2, NOV. 12, 2001
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector data indicated by A12 to A15 are erased. External
erase verification is not required because data are
erased automatically by internal control circuit. Erasure
completion can be verified by DATA polling and toggle bit
checking after automatic erase starts. Device outputs 0
during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM (WORD MODE)
tAH
Sector
Address0
555H
2AAH
2AAH
555H
555H
Sector
Address1
Sector
Addressn
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A12~A15
Q7
A0~A10
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #30H
Command #30H
Command #30H
Command #55H
Command #AAH
Command #80H
Command #55H
Command #AAH
(Q0~Q7)
Command
In
Command
In
tDH
tDS
tCEP
tCWC
tAETB
tBAL
DATA polling
tCEPH1
tAS
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
相關(guān)PDF資料
PDF描述
MX29F100TMC-55 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29F100TTC-12 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-55 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-70 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F1610 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
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