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參數(shù)資料
| 型號： | MWT-1789SB |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MWT-1789SB |
MwT-1789SB
0.5 – 4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
(II) BALANCED CIRCUIT CONFIGURATION
CIRCUIT SCHEMATIC
BILL OF MATERIALS:
Value
Unit
Reference Designation
0.87-0.96
1.93-1.99
GHz
Part
Size
C7
100
pF
Chip Capacitor
0603
C8
1000
pF
Chip Capacitor
0603
C9
0.1
uF
Chip Capacitor
1206
C1, C2, C3, C4
100
22
pF
Chip Capacitor
0603
C5, C10
0.5
1.2
pF
Chip Capacitor
0603
C6, C11
1.6
1.2
pF
Chip Capacitor
0603
L1, L3
6.8
5.1
nH
Chip Inductor
0603
L2, L4
5.1
1.8
nH
Chip Inductor
0603
L5, L6, L7, L8
100
82
nH
Chip Inductor
0603
R1, R2
1000
Ohm
Chip Resistor
0603
R3, R4
50
Ohm
Chip Resistor
0603
H1, H2
-
Quad. Hybrid
0.35” x 0.56”
Q1, Q2
MWT-1789SB MWT-1789SB
-
MESFET
SOT89
TYPICAL RF PERFORMANCE:
(Vdd=5.0V, Ids~200mA, Ta=25
°C)
Freq
Gain
ΔG
NF
P1dB
IP3
VSWR
MHZ
dB
dBm
In
Out
870-960
17
+/- 0.3
1.1
25
41
1.2:1
1930-1990
15
+/- 0.2
1.4
25
41
1.2:1
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| MWT-24 | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
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