參數(shù)資料
型號(hào): MWT-17Q3
廠商: MICROWAVE TECHNOLOGY INC
元件分類: 功率晶體管
英文描述: S BAND, GaAs, P-CHANNEL, RF POWER, MESFET
封裝: 3 X 3 MM, ROHS COMPLIANT, QFN-16
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 169K
代理商: MWT-17Q3
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Features:
Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
o
45 dBm IP3
o
70 dBc ACPR
o
28.5 dBm P1dB
o
14 dB SSG @ 2000 MHz
o
1.3 dB NF @ 2000 MHz
MTTF > 100 years @ channel temperature 150C
Lead Free RoHS Compliant Surface-Mount QFN3X3 Package
Description:
The MwT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity
driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless
infrastructure standards, such as GSM, TDMA, CDMA, Edge, CDMA2000, WCDMA, TD-SCDMA, and UMTS base stations. This
product is also idea for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16
WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point microwave
communications links. The third order intercept performance of the MwT-17Q3 is excellent, typically 18 dB above the 1 dB power
gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced using MwT's proprietary high
linearity device design. It also uses MwT reliable metallization process. All chips are passivated using MwT's patented "Diamond-
Like Carbon" process for increased durability.
Electrical Specifications: Vds=7.0V, Ids=500mA, Ta=25 °C, Zo=50 ohm
Target for Driver and PA applications (Vds=6.5V, Ids=200mA, Ta=25 °C)
Parameter
Units
Typical Data
Test Frequency
MHz
900
1950
2500
3500
Gain
dB
18
14
11
10
Input Return Loss
dB
10
9
Output Return Loss
dB
10
8
9
Output P1dB
dBm
28.5
Output IP3
dBm
45
Noise Figure
dB
3
4
Target for High Dynamic Range and Low Noise Applications (Vds=5V, Ids=200mA, Ta=25 °C)
Parameter
Units
Typical Data
Test Frequency
MHz
900
1950
2500
3500
Gain
dB
18
16
13
10
Output IP3
dBm
43
44
Noise Figure (1)
dB
0.8
1.3
1.5
2.2
1. Noise Figure is taken at Ids=100mA.
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