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參數(shù)資料
| 型號(hào)： | MWT-17Q3 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, P-CHANNEL, RF POWER, MESFET |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, QFN-16 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | MWT-17Q3 |
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
DC Specifications
: (Ta = 25C)
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=3.0 V Vgs=0.0 V
mA
440
680
Gm
Transconductance
sVds=2.0 V Vgs=0.0 V
mS
380
Vp
Pinch-off Voltage
Vds=3.0 V Ids=16.0 mA
V
-2.5
-5.0
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -2.4 mA
V
-6.0
-12.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -2.4 mA
V
-9.0
-12.0
Rth
Thermal Resistance
°C/W
30
MwT-17Q3 Noise Parameters
(Ids=100mA, Vds=5V)
Freq.
Fmin
Γo
MHz
dB
Mag.
Ang
R/50
910
0.8
0.18
75
0.14
2000
1.2
0.3
138
0.13
2500
1.3
0.25
164
0.12
3000
1.5
0.27
175
0.12
3500
1.7
0.29
180
0.11
Mw T-17Q3 dB(S21) & MSG
0.0
10.0
20.0
30.0
40.0
0
1
2
345
6
Freq (GHz)
Gain
(dB)
dB(S21)
MSG
QFN Outline Diagram
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