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參數(shù)資料
| 型號(hào)： | MWT-24 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | CHIP |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MWT-24 |
MwT-24
4W High Linearity GaAs FET
Preliminary Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Features:
+36 dBm typical Output Power at 6 GHz
11 dB typical Small Signal Gain at 6 GHz
40% typical PAE at 6 GHz
0.5 x 12000 Micron Refractory Metal/Gold Gate
Sorted into 200 mA Idss Bin Ranges
Excellent for High Power, and High Power
Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 2,311 x 508 microns
Chip Thickness: 75 microns
Description:
The MwT-24 is GaAs MESFET device device whose nominal 0.5 micron gate length and 12000 microns gate width make it ideally
suited for applications requiring high power up to 4watts. The chip is produced using MwT's reliable metal systems and all
devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon"
process for increased durability.
Electrical Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
OIP3
Output IP3 with two tones
Vds=8.0 V Ids=0.6xIDSS=1.3 A
dBm
48
P1dB
Output Power at 1dB Compression
Vds=8.0 V Ids=0.6xIDSS=1.3 A
6 GHz
dBm
36.0
SSG
Small Signal Gain
Vds=8.0 V Ids=0.6xIDSS=1.3 A
6 GHz
dB
11.0
PAE
Power Added Efficiency at P1dB
Vds=8.0 V Ids=0.6xIDSS=1.3 A
6 GHz
%
40
IDSS
Recommended IDSS Range
mA
1800-
2400
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