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參數(shù)資料
| 型號(hào)： | MWT-24 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | CHIP |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MWT-24 |
MwT-24
4W High Linearity GaAs FET
Preliminary Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
DC Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
mA
1800
2400
Gm
Transconductance
Vds=2.5 V Vgs=0.0 V
mS
1000
1200
Vp
Pinch-off Voltage
Vds=3.0 V Ids=30 mA
V
-1.2
-5.0
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -12.0 mA
V
-8.0
-12.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -12.0 mA
V
-14.0
-16.0
Rth
Chip Thermal Resistance
C/W
7
MAXIMUM RATINGS AT Ta = 25
°C
Symbol
Parameter
Units
Absolute Maximum
VdS
Drain-Source Voltage
V
12
Vgs
Gate-Source Voltage
V
-6 to +0.8
Ids
Drain Current
mA
1800
Igs
Gate Current
mA
12
Pdiss
DC Power Dissipation
W
20
Pin max
RF Input Power
dBm
+36
Tch
Channel Temperature
°C
150
Tstg
Storage Temperature
°C
-65 to 150
Note: Operation of this device above any one of these parameters may cause permanent damage.
ORDERING INFORMATION:
When placing order or inquiring, please specify BIN range, wafer number, if known, and visual screening level required. For details of BIN Selection and
Safe Handling Procedure please see supplementary information in available PDF on our website www.mwtinc.com.
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