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參數(shù)資料
| 型號(hào)： | MWT-1789SB |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MWT-1789SB |
MwT-1789SB
0.5 – 4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
BILL OF MATERIALS:
Value
Unit
Reference
Designation
0.80-1.00
1.90-2.10
2.40-2.60
3.50-3.70
GHz
Part
Size
C11
100
pF
Chip Capacitor
0505
C10
1000
pF
Chip Capacitor
0505
C9
0.1
μF
Chip Capacitor
0505
C1 C5
33
22
pF
Chip Capacitor
0505
C2
0.8
2.0
1.2
1.0
pF
Chip Capacitor
0505
C3
100
33
22
pF
Chip Capacitor
0505
C4
4.3
1.2
0.5
1.0
pF
Chip Capacitor
0505
L1
4.7
0
1.2
5.1
nH
Chip Inductor
0603
L3
100
10
nH
Chip Inductor
0603
L4
2.5
0
nH
Chip Inductor
0603
R1
1000
Ohm
Chip Resistor
0603
R2
280
330
300
280
Ohm
Chip Resistor
0603
TR1
0
25
0
Deg
50 Ohm TRL
-
TR2
0
15
30
Deg
50 Ohm TRL
-
Q
MWT-1789SB
-
MESFET
SOT89
TYPICAL RF PERFORMANCE:
(A)
For High Linearity Applications
Vdd = 6.5V, Ids = 260 mA, Ta = 25
°C
FREQ (MHz)
800-1000
1900-2100
2400-2600
3500-3700
SSG (dB)
18
16
13
R/L, In (dB)
-10
-11
-10
R/L, Out (dB)
-9
-11
-10
NF (dB)
2.5
2.7
3.0
P1dB (dBm)
27
IP3 (dBm)
43
(B)
For Low Noise Applications
Vdd = 5.0V, Ids = 100 mA, Ta = 25
°C
FREQ (MHz)
800-1000
1900-2100
2400-2600
3500-3700
SSG (dB)
16.0
14.0
13.0
12.5
R/L, In (dB)
-9
-8
R/L, Out (dB)
-10
NF (dB)
1.7
1.8
2.3
2.6
P1dB (dBm)
22.5
22
IP3 (dBm)
38
37
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