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參數(shù)資料
| 型號(hào)： | MWT-1789SB |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | MWT-1789SB |
MwT-1789SB
0.5 – 4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
Features:
Designed for single voltage operations
Ideal for 0.5 – 4.0 GHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
o
44 dBm IP3
o
65 dBc ACPR
o
28 dBm P1dB
o
18 dB SSG @ 2000MHz
o
1.3 dB NF @ 2000MHz
MTTF>100 years @ channel temperature 150 °C
Lead Free RoHS Compliant Surface-Mount SOT-89 Package
Description:
Designed specifically for single voltage operations (i.e., no negative voltage is required), the MwT-1789SB is a high linearity GaAs
MESFET device in low cost SOT89 package that is ideally suited for high linearity driver or high dynamic range LNA applications. The
applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-
SCDMA, and UMTS base stations. This product is alsoideal for high data rate wireless LAN infrastructure applications, such as high
QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-
point microwave communications links. The third order intercept performance of the MwT-1789SBis excellent, typically 16 dB above
the 1 dB power gain compression point. The NF is as low as 1.0 dB at900 MHz. The chip is produced using MwT's proprietary high
linearity device design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon"
process for increased durability.
Electrical Specifications(1)
: @ Vdd=6.5V, Ids~260mA, Ta=25 °C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNIT
TYP
SSG
Small Signal Gain
2GHz
dB
18
P1dB
Output Power @ 1 dB Compression
2GHz
dBm
28
PAE
Power Added Efficiency
2GHz
%
40
IP3
Third Order Intercept Point
2GHz
dBm
44
NF
Noise Figure (2)
2GHz
dB
1.3
(1) RF measurements are taken in a test fixture with tuners at input and output.
(2) Vdd=4.5 V @ Ids~100mA.
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