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參數(shù)資料
| 型號： | MWT-1789 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SOT-89, 4PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 467K |
| 代理商： | MWT-1789 |
MwT-1789
DC-4 GHz Packaged FET
Preliminary Data Sheet April 2005
Features
Ideal for DC –4000 MHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
46 dBm IP3
70 dBc ACPR
28 dBm P1dB
14 dB SSG @ 2000 MHz
1.3 dB NF @ 2000 MHz
MTTF > 100 years @ channel temperature 150C
Lead Free RoHS Compliant Surface-Mount SOT-89 Package
Download MwT-1789 SPARAM Files (zipped file)
Product Description
The MwT-1789 is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity
driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G
wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-SCDMA, and UMTS base
stations. This product is also idea for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11
WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point
microwave communications links. The third order intercept performance of the MwT-1789 is excellent, typically 18 dB
above the 1 dB power gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced
using MwT's proprietary high linearity device design. It also uses MwT reliable metallization process. All chips are
passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.
Typical RF Performance (1)
Target for Driver and PA applications (Vds=6.5V, Ids=200mA, Ta=25 °C)
Parameter
Units
Typical Data
Test Frequency
MHz
900
1950
2500
3500
Gain
dB
18
14
11
10
Input Return Loss
dB
10
Output Return Loss
dB
10
8
10
Output P1dB
dBm
28.5
Output IP3
dBm
46
Noise Figure
dB
3
4
Target for High Dynamic Range and Low Noise Applications (Vds=5V, Ids=200mA, Ta=25 °C)
Parameter
Units
Typical Data
Test Frequency
MHz
900
1950
2500
3500
Gain
dB
18
16
13
10
Output IP3
dBm
43
46
Noise Figure (2)
dB
0.8
1.3
1.5
2.2
1. RF data is taken from an application circuit. See application notes for details of RF performance and configuration of application circuit.
2. Noise Figure is taken at Ids=100mA.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
Data contained herein is subject to change without notice. All rights reserved 2005
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