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參數(shù)資料
| 型號： | MTW32N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET) |
| 中文描述： | 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 98K |
| 代理商： | MTW32N20E |
MTW32N20E
http://onsemi.com
5
Figure 9.. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. . Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
V
0
QT, TOTAL CHARGE (nC)
V
20
10
20
t
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. . Diode Forward Voltage versus Current
I
16
12
8
4
0
30
40
50
60
70
Q1
Q2
Q3
1000
100
10
1
RG, GATE RESISTANCE (OHMS)
1
10
100
td(off)
td(on)
0
0.2
0.4
0.6
0.8
1
30
20
10
0
tf
tr
80
90
100
TJ = 25
°
C
ID = 32 A
VDD = 100 V
VGS = 10 V
QT
200
180
160
140
120
100
80
60
40
20
0
2
20
VGS
200
20
2
VDS
TJ = 25
°
C
VGS = 0 V
TJ = 25
°
C
ID = 32 A
VDS = 160 V
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
Resistance–General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10
μ
s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
“Transient
Thermal
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW32N20EG | 功能描述:MOSFET NFET T0247 200V 32A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTW32N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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