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參數(shù)資料
| 型號： | MTW32N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET) |
| 中文描述： | 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 98K |
| 代理商： | MTW32N20E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MTW32N20E/D
MTW32N20E
Preferred Device
Power MOSFET
32 Amps, 200 Volts
N–Channel TO–247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
200
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage – Continuous
200
Vdc
±
20
Vdc
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
32
19
128
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
180
1.44
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vpk,
IL = 32 Apk, L = 1.58 mH, RG = 25
)
Thermal Resistance – Junction to Case
Thermal Resistance
– Junction to Ambient
EAS
810
mJ
R
θ
JC
R
θ
JA
TL
0.7
40
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
MTW32N20E
TO–247
30 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
LL
Y
WW
= Location Code
= Year
= Work Week
MTW32N20E
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
D
G
TO–247AE
CASE 340K
Style 1
N–Channel
S
32 AMPERES
200 VOLTS
RDS(on) = 75 m
1
23
4
1
Gate
3
Source
2
Drain
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW32N20EG | 功能描述:MOSFET NFET T0247 200V 32A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTW32N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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