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參數(shù)資料
| 型號： | MTW32N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET) |
| 中文描述： | 32 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | MTW32N20E |
MTW32N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
–
–
247
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0)
(VDS = 200 Vdc, VGS = 0, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
250
1000
μ
Adc
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
–
8.0
4.0
–
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 32 Adc)
(ID = 16 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
–
0.064
0.075
Ohm
–
–
–
–
3.0
2.7
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)
gFS
12
–
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
–
3600
5000
pF
Output Capacitance
–
130
250
Reverse Transfer Capacitance
–
690
1000
SWITCHING CHARACTERISTICS
(Notes 1. & 2.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
–
25
50
ns
Rise Time
(VDD = 100 Vdc, ID = 32 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.2
RG 6.2
)
–
120
240
Turn–Off Delay Time
–
75
150
Fall Time
–
91
182
Gate Charge
–
85
120
nC
(VDS = 160 Vdc, ID = 32 Adc,
(VDS 160 Vdc, ID 32 Adc,
VGS = 10 Vdc)
Q1
Q2
Q3
–
12
–
–
40
–
–
30
–
SOURCE–DRAIN DIODE CHARACTERISTICS
(Note 1.)
Forward On-Voltage
(IS = 32 Adc, VGS = 0)
(IS = 16 Adc, VGS = 0, TJ = 125
°
C)
VSD
–
–
1.1
0.9
2.0
–
Vdc
Reverse Recovery Time
trr
ta
tb
–
280
–
ns
(IS = 32 Adc, VGS = 0,
(IS 32 Adc, VGS 0,
dIS/dt = 100 A/
μ
s)
–
195
–
–
85
–
Reverse Recovery Stored Charge
QRR
–
2.94
–
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
–
5.0
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
LS
–
13
–
nH
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| MTW32N20EG | 功能描述:MOSFET NFET T0247 200V 32A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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