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參數(shù)資料
| 型號(hào)： | MTW8N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 8 Amps, 600 Volts N-Channel(8A，600V，N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 600 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 109K |
| 代理商： | MTW8N60E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
Publication Order Number:
MTW8N60E/D
MTW8N60E
Preferred Device
Power MOSFET
8 Amps, 600 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
600
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
≤
10 ms)
600
Vdc
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
8.0
6.4
24
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
180
1.43
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 24 Apk, L = 3.0 mH, RG = 25
)
Thermal Resistance – Junction to Case
Thermal Resistance
– Junction to Ambient
EAS
864
mJ
R
θ
JC
R
θ
JA
TL
0.70
40
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
MTW8N60E
TO–247
30 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
LL
Y
WW
= Location Code
= Year
= Work Week
MTW8N60E
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
D
G
TO–247AE
CASE 340K
Style 1
N–Channel
S
8 AMPERES
600 VOLTS
RDS(on) = 550 m
1
23
4
1
Gate
3
Source
2
Drain
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|---|---|
| MTW8N60E/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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| MTWB 1562 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 4062 | 制造商:Signal Construct GmbH 功能描述: |
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