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參數(shù)資料
| 型號： | MTW8N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 8 Amps, 600 Volts N-Channel(8A，600V，N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 600 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | MTW8N60E |
MTW8N60E
http://onsemi.com
6
SAFE OPERATING AREA
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
0.1
10
100
μ
s
1 ms
10 ms
dc
10
μ
s
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
I
1.0
t, TIME (ms)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
1.0
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
10
900
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
50
100
125
75
800
700
600
500
400
300
100
200
ID = 8 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW8N60E/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTWB 1552 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 1562 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 4062 | 制造商:Signal Construct GmbH 功能描述: |
| MTX M83723/84W1831N | 制造商:Amphenol Corporation 功能描述:CONNECTOR |
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