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參數(shù)資料
| 型號(hào)： | MTW8N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 8 Amps, 600 Volts N-Channel(8A，600V，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 8 A, 600 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | MTW8N60E |
MTW8N60E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
600
–
–
695
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
10
100
μ
Adc
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.0
7.0
4.0
–
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 4.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
–
0.46
0.55
Ohm
–
–
3.2
–
4.8
4.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc)
gFS
4.0
8.5
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
2480
3470
pF
Output Capacitance
–
247
346
Reverse Transfer Capacitance
–
56
120
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
–
23.6
50
ns
Rise Time
(VDD = 300 Vdc, ID = 8.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
RG 9.1
)
–
37.6
70
Turn–Off Delay Time
–
80
170
Fall Time
–
48
95
Gate Charge
(See Figure 8)
QT
–
67
100
nC
(VDS = 300 Vdc, ID = 8.0 Adc,
VGS= 10 Vdc)
VGS = 10 Vdc)
Q1
Q2
Q3
–
17
–
–
26
–
–
27
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 8.0 Adc, VGS = 0 Vdc)
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
–
–
0.829
0.71
1.1
–
Vdc
Reverse Recovery Time
(See Figure 14)
trr
ta
tb
–
381
–
ns
(IS = 8 0 Adc VGS
dIS/dt = 100 A/
μ
s)
0 Vdc
–
225
–
–
156
–
Reverse Recovery Stored
Charge
QRR
–
4.61
–
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
–
13
–
nH
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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| MTW8N60E/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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