參數資料
型號: MTP10N10EL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Power MOSFET(功率MOSFET)
中文描述: 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數: 6/8頁
文件大小: 102K
代理商: MTP10N10EL
MTP10N10EL
http://onsemi.com
6
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
,
A
E
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
A
I
D
= 10A
30
20
10
0
25
50
75
100
125
150
100
10
1
0.1
0.1
1
10
100
100 s
10 s
1 ms
10 ms
dc
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
1
0.1
0.010.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
JC
(t) = r(t) R
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
40
50
r
T
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相關代理商/技術參數
參數描述
MTP10N10ELG 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTP10N10M 制造商:Motorola Inc 功能描述:
MTP10N15 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N25 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N40 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS