參數(shù)資料
型號： MTP2P50E
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power MOSFET 2 Amps, 500 Volts
中文描述： 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 1/8頁
文件大小： 103K
代理商： MTP2P50E
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MTP2P50E/D
MTP2P50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
P–Channel TO–220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
≤
10 ms)
500
Vdc
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
2.0
1.6
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
75
0.6
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 4.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction to Case
– Junction to Ambient
EAS
80
mJ
R
θ
JC
R
θ
JA
TL
1.67
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
260
°
C
D
S
G
2 AMPERES
500 VOLTS
RDS(on) = 6
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP2P50E
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
P–Channel
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP2P50E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
MTP2P50E
LLYWW
1
Gate
3
Source
2
Drain
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