參數(shù)資料
型號： MTP2P50E
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power MOSFET 2 Amps, 500 Volts
中文描述： 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 103K
代理商： MTP2P50E
MTP2P50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
–
–
564
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
–
–
–
–
10
100
μ
Adc
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.0
4.0
4.0
–
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
–
4.5
6.0
Ohm
–
–
9.5
–
14.4
12.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
gFS
0.5
–
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
845
1183
pF
Output Capacitance
–
100
140
Reverse Transfer Capacitance
–
26
52
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
–
12
24
ns
Rise Time
(VDD = 250 Vdc, ID = 2.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
RG 9.1
)
–
14
28
Turn–Off Delay Time
–
21
42
Fall Time
–
19
38
Gate Charge
(See Figure 8)
QT
Q1
Q2
Q3
–
19
27
nC
(VDS = 400 Vdc, ID = 2.0 Adc,
(VDS 400 Vdc, ID 2.0 Adc,
VGS = 10 Vdc)
–
3.7
–
–
7.9
–
–
9.9
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 125
°
C)
VSD
–
–
2.3
1.85
3.5
–
Vdc
Reverse Recovery Time
(See Figure 14)
trr
ta
–
223
–
ns
(IS= 2 0 Adc VGS= 0 Vdc
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s)
–
161
–
tb
–
62
–
Reverse Recovery Stored
Charge
QRR
–
1.92
–
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
–
–
3.5
4.5
–
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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