參數(shù)資料
型號(hào)： MTP10N10EL
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power MOSFET(功率MOSFET)
中文描述： 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 102K
代理商： MTP10N10EL
MTP10N10EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
115
Vdc
mV/
°
C
Adc
Zero Gate Voltage Drain Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
°
(V
DS
= 100 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
GateBody Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 2)
I
DSS
10
100
I
GSS
100
nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.45
4.0
2.0
Vdc
mV/
°
C
Ohm
Static DraintoSource OnResistance (V
GS
= 5.0 Vdc, I
D
= 5.0 Adc)
DraintoSource OnVoltage
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
°
(V
GS
= 5.0 Vdc, I
D
= 5.0 Adc, T
J
= 125
°
C)
Forward Transconductance (V
DS
= 8.0 Vdc, I
D
= 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
R
DS(on)
V
DS(on)
0.17
0.22
1.85
2.6
2.3
Vdc
gFS
5.0
7.9
mhos
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1 0 MHz)
f = 1.0 MHz)
C
iss
C
oss
C
rss
741
1040
pF
Output Capacitance
175
250
Reverse Transfer Capacitance
18.9
40
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
11
20
ns
Rise Time
(V
DD
= 50 Vdc, I
D
= 10 Adc,
V
= 5.0 Vdc, R
= 9.1 )
GS
74
150
TurnOff Delay Time
17
30
Fall Time
g
38
80
Gate Charge
9.3
15
nC
(See Figure 8)
(V
DS
= 80 Vdc, I
D
= 10 Adc,
V
= 5.0 Vdc)
GS
2.56
4.4
4.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(I
S
= 10 Adc, V
GS
= 0 Vdc)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.98
0.898
1.6
Vdc
Reverse Recovery Time
e e se
eco e y
t
rr
t
a
t
b
124.7
ns
(I
S
= 10 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
10 Adc V
86
38.7
Reverse Recovery Stored
Charge
Q
RR
0.539
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
d
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad.)
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
3. Switching characteristics are independent of operating junction temperature.
L
s
7.5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTP10N10ELG 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTP10N10M 制造商:Motorola Inc 功能描述:
MTP10N15 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N25 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N40 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
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