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參數(shù)資料
| 型號： | MTP10N10EL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | MTP10N10EL |
MTP10N10EL
http://onsemi.com
5
Q
G
, TOTAL GATE CHARGE (nC)
DRAINTOSOURCE DIODE CHARACTERISTICS
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
0.5
0.9
1.0
0
10
0.8
0.6
0.7
6
2
4
8
V
GS
= 0 V
T
J
= 25
°
C
12
8
4
0
0
2
4
6
8
90
V
V
75
45
30
15
0
T
J
= 25
°
C
I
D
= 10 A
Q
T
Q
2
Q
3
V
GS
t
1000
100
10
11
10
100
R
G
, GATE RESISTANCE (OHMS)
T
J
= 25
°
C
I
D
= 10 A
V
DS
= 100 V
V
GS
= 5 V
t
d(off)
t
d(on)
t
f
t
r
V
DS
10
60
Q
1
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded and the
transition time (t
r
,t
f
) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (T
J(MAX)
T
C
)/(R
JC
).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
“Transient
Thermal
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
| MTP10N15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS |
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