參數(shù)資料
型號(hào)： MTP10N10EL
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power MOSFET(功率MOSFET)
中文描述： 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 102K
代理商： MTP10N10EL
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 4
1
Publication Order Number:
MTP10N10EL/D
MTP10N10EL
Preferred Device
Power MOSFET
10 A, 100 V, Logic Level, NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
PbFree Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
100
Vdc
DraintoGate Voltage (R
GS
= 1.0 M )
V
DGR
100
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
15
±
20
Vdc
Vpk
Drain Current
Continuous @ T
C
= 25
°
C
Continuous @ T
C
= 100
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
10
6.0
35
Adc
Apk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
C
= 25
°
C
(Note 1)
P
D
40
0.32
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature
Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, Peak
I
L
= 10 Adc, L = 1.0 mH, R
G
= 25 )
E
AS
50
mJ
Thermal Resistance
JunctiontoCase
°
JunctiontoAmbient
JunctiontoAmbient (Note 1)
R
JC
R
JA
R
JA
3.13
100
71.4
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 secs
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
10 A, 100 V
R
DS(on)
= 0.22
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP10N10EL
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP10N10EL
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
MTP10N10EL
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
http://onsemi.com
MTP10N10ELG
TO220AB
(PbFree)
50 Units/Rail
*For additional information on our PbFree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
相關(guān)PDF資料
PDF描述
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MTP30N08M POWER FIELD EFFECT TRANSISTOR
MTP50P03HDL Power MOSFET 50 Amps, 30 Volts, Logic Level(50A,30V,TO220,P溝道功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTP10N10ELG 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTP10N10M 制造商:Motorola Inc 功能描述:
MTP10N15 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N25 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N40 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
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