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參數(shù)資料
| 型號： | MTP12P10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 12 Amps, 100 Volts(12A,100V,TO220,P溝道功率MOSFET) |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 90K |
| 代理商： | MTP12P10 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MTP12P10/D
MTP12P10
Preferred Device
Power MOSFET
12 Amps, 100 Volts
P–Channel TO–220
This Power MOSFET is designed for medium voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds – Switching Times Specified
at 100
°
C
Designer’s Data – IDSS, VDS(on), VGS(th) and SOA Specified
at Elevated Temperature
Rugged – SOA is Power Dissipation Limited
Source–to–Drain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
100
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
μ
s)
100
Vdc
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current – Continuous
Drain Current
– Pulsed
ID
IDM
12
28
Adc
Total Power Dissipation
Derate above 25
°
C
PD
75
0.6
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–65 to
150
°
C
Thermal Resistance
– Junction to Case
– Junction to Ambient
°
R
θ
JC
R
θ
JA
TL
1.67
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
260
°
C
D
S
G
12 AMPERES
100 VOLTS
RDS(on) = 300 m
Device
Package
Shipping
ORDERING INFORMATION
MTP12P10
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
P–Channel
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP12P10
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
MTP12P10
LLYWW
1
Gate
3
Source
2
Drain
Preferred
devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP1302 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 42A 3-Pin(3+Tab) TO-220 Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTP1306 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTP1403BQ8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| MTP14N05L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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