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參數(shù)資料
| 型號(hào)： | MTP12P10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 12 Amps, 100 Volts(12A,100V,TO220,P溝道功率MOSFET) |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | MTP12P10 |
MTP12P10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
V(BR)DSS
100
–
Vdc
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = Rated VDSS, VGS = 0, TJ = 125
°
C)
IDSS
–
–
10
100
μ
Adc
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSF
IGSSR
–
100
nAdc
–
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
TJ = 100
°
C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc)
Drain–Source On–Voltage (VGS = 10 V)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 100
°
C)
RDS(on)
VDS(on)
–
0.3
Ohm
–
–
4.2
3.8
Vdc
Forward Transconductance (VDS = 15 V, ID = 6.0 A)
gFS
2.0
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS= 25 V, VGS= 0,
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
See Figure 10
Ciss
Coss
Crss
–
920
pF
Output Capacitance
–
575
Reverse Transfer Capacitance
–
200
SWITCHING CHARACTERISTICS
(Note 1.)
(TJ = 100
°
C)
Turn–On Delay Time
td(on)
tr
td(off)
tf
Qg
–
50
ns
Rise Time
(VDD = 25 V, ID = 0.5 Rated ID,
RG= 50
RG = 50
)
See Figures 12 and 13
–
150
Turn–Off Delay Time
–
150
Fall Time
–
150
Total Gate Charge
(VDS= 0.8 Rated VDSS,
(VDS = 0.8 Rated VDSS,
ID
See Figure 11
33 (Typ)
50
nC
Gate–Source Charge
Qgs
Qgd
16 (Typ)
–
Gate–Drain Charge
D
GS
17 (Typ)
–
SOURCE–DRAIN DIODE CHARACTERISTICS
(Note 1.)
Forward On–Voltage
(IS = Rated ID,
VGS = 0)
R t d I
VSD
ton
trr
4.0 (Typ)
5.5
Vdc
Forward Turn–On Time
Limited by stray inductance
Reverse Recovery Time
300 (Typ)
–
ns
INTERNAL PACKAGE INDUCTANCE (TO–204)
Internal Drain Inductance
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Ld
5.0 (Typ)
–
nH
Internal Source Inductance
(Measured from the source pin, 0.25
″
from the package
to the source bond pad)
Ls
12.5 (Typ)
–
INTERNAL PACKAGE INDUCTANCE (TO–220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
Ld
3.5 (Typ)
4.5 (Typ)
–
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
Ls
7.5 (Typ)
–
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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