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參數(shù)資料
| 型號(hào)： | MTD10N10ELG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 78K |
| 代理商： | MTD10N10ELG |
MTD10N10EL
http://onsemi.com
5
DRAINTOSOURCE DIODE CHARACTERISTICS
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
QG, TOTAL GATE CHARGE (nC)
12
8
4
0
02
4
6
8
90
V DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS
V GS
,GA
TETOSOURCE
VOL
TAGE
(VOL
TS
)
75
45
30
15
0
TJ = 25°C
ID = 10 A
QT
Q2
Q3
VGS
t,TIME
(ns)
1000
100
10
1
110
1
RG, GATE RESISTANCE (OHMS)
TJ = 25°C
ID = 10 A
VDS = 100 V
VGS = 5 V
td(off)
td(on)
tf
tr
VDS
10
60
Q1
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
I S
,SOURCE
CURRENT
(AMPS)
0.5
0.9
1.0
0
10
0.8
0.6
0.7
6
2
4
8
VGS = 0 V
TJ = 25°C
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous draintosource voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal ResistanceGeneral
Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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| MTD12N06EZLT4 | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MTD10N10ELT4 | 功能描述:MOSFET N-CH 100V 10A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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| MTD1110-4101 | 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
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