參數(shù)資料
型號(hào): MTD10N10ELG
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, CASE 369C-01, DPAK-3
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 78K
代理商: MTD10N10ELG
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 3
1
Publication Order Number:
MTD10N10EL/D
MTD10N10EL
TMOS EFET
Power Field Effect Transistor
DPAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
100
Vdc
GatetoSource Voltage Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
±15
±20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 ms)
ID
IDM
10
6.0
35
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (Note 2)
PD
40
0.32
1.75
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 10 Apk,
L = 1.0 mH, RG = 25 W)
EAS
50
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10 sec
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using minimum recommended pad
size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.
http://onsemi.com
MARKING DIAGRAM & PIN ASSIGNMENTS
10N10EL = Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
D
S
G
VDSS
RDS(ON) TYP
ID MAX
100 V
0.22
W
10 A
NChannel
Gate 1
4
Drain
Device
Package
Shipping
ORDERING INFORMATION
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MTD10N10ELT4G
DPAK
(PbFree)
2500 Tape & Reel
1 2
3
4
YWW
10ELG
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain 2
Source 3
MTD10N10ELT4
DPAK
2500 Tape & Reel
10N
相關(guān)PDF資料
PDF描述
MTD10N10EL 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD10N10ELT4 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD12N06EZLT4 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD12N06EZLT4 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD12N06EZL 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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