- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96091 > MTD10N10ELG (ON SEMICONDUCTOR) 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTD10N10ELG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 78K |
| 代理商： | MTD10N10ELG |
MTD10N10EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
115
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.45
4.0
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 5.0 Adc)
RDS(on)
0.17
0.22
W
DraintoSource OnVoltage
(VGS = 5.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C)
VDS(on)
1.85
2.6
2.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
2.5
7.9
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
741
1040
pF
Output Capacitance
Coss
175
250
Reverse Transfer Capacitance
Crss
18.9
40
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 50 Vdc, ID = 10 Adc,
VGS = 5.0 Vdc, RG = 9.1 W)
td(on)
11
20
ns
Rise Time
tr
74
150
TurnOff Delay Time
td(off)
17
30
Fall Time
tf
38
80
Gate Charge (See Figure 8)
(VDS = 80 Vdc, ID = 10 Adc,
VGS = 5.0 Vdc)
QT
9.3
15
nC
Q1
2.56
Q2
4.4
Q3
4.66
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.98
0.898
1.6
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
124.7
ns
ta
86
tb
38.7
Reverse Recovery Stored Charge
QRR
0.539
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD10N10EL | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD10N10ELT4 | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD12N06EZLT4 | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD12N06EZLT4 | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD12N06EZL | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD10N10ELT4 | 功能描述:MOSFET N-CH 100V 10A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| MTD10N10ELT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount |
| MTD1110 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
| MTD1110-4101 | 功能描述:馬達/運動/點火控制器和驅(qū)動器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| MTD1110-4102 | 功能描述:馬達/運動/點火控制器和驅(qū)動器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。