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| 型號： | MTB52N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 52 AMPERES 60 VOLTS |
| 中文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 200K |
| 代理商： | MTB52N06VL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
TJ = 25
°
C
VGS = 10 V
8 V
7 V
5 V
4 V
3 V
100
80
70
60
40
30
20
10
0
2
0
1.0
5
3
2.5
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
VGS = 5 V
20
0
.030
0
40
60
80
100
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
.040
0
VGS = 5 V
10 V
VGS = 5 V
ID = 26 A
1.6
1.4
1
0.6
0.4
–50
–25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125
°
C
1
0
10
20
30
40
50
60
4
6
8
10
100
90
80
70
60
50
40
30
20
10
0
2
4
6
1.5
.020
.010
.030
.020
.010
20
40
60
80
110
100
10
100
°
C
175
1.8
110
90
50
1
3
5
7
9
110
3.5
4.5
5.5
0.5
30
10
50
70
90
110
.035
.025
.015
.005
10
30
50
70
90
1.2
0.8
6 V
.060
.050
.040
100
0.2
0
1000
.070
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參數(shù)描述 |
|---|---|
| MTB52N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK T/R |
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| MTB55N06Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB55N06ZT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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