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參數(shù)資料
| 型號(hào)： | MTB60N06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 60 AMPERES 60 VOLTS |
| 中文描述： | TMOS是功率FET 60安培60伏特 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 280K |
| 代理商： | MTB60N06 |
1
Motorola, Inc. 1995
# "
! !
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
60
Vdc
±
20
±
30
Vdc
Vpk
60
42.3
180
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
540
mJ
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
(1) When mounted with the minimum recommended pad size.
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTB60N06HD/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
60 AMPERES
60 VOLTS
RDS(on) = 0.014 OHM
Motorola Preferred Device
D
S
G
CASE 418B–02, Style 2
D2PAK
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| MTB75N05HD | TMOS POWER FET 75 AMPERES 50 VOLTS |
| MTB75N06HD | TMOS POWER FET 75 AMPERES 60 VOLTS |
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| MTB9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS |
| MTD2955V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB60N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK |
| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
| MTB60N10E7L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
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