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參數(shù)資料
| 型號(hào)： | MTB75N05HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES 50 VOLTS |
| 中文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 254K |
| 代理商： | MTB75N05HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
$ #
" "!
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
50
Volts
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
50
±
20
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
75
65
225
Amps
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (minimum footprint, FR–4 board)
PD
125
1.0
2.5
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
– 55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, Peak IL = 75 A, L = 0.177 mH, RG = 25
)
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (minimum footprint, FR–4 board)
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB75N05HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
TMOS POWER FET
75 AMPERES
50 VOLTS
RDS(on) = 9.5 m
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
REV 2
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|---|---|
| MTB75N06HD | TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB75N06 | TMOS POWER FET 75 AMPERES 60 VOLTS |
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| MTD2955V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTD2955V | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB75N05HDT4 | 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MTB75N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB75N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail |
| MTB7671 | 制造商:Megger 功能描述:METER TEST BOX |
| MTB-7PL80 | 制造商:ITT Interconnect Solutions 功能描述:MTB-7PL80 / 095262-0006 / MICRO |
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