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參數(shù)資料
| 型號： | MTB75N05HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES 50 VOLTS |
| 中文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 254K |
| 代理商： | MTB75N05HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2)(2)
V(BR)DSS
50
—
—
54.9
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
(VDS = 50 V, VGS = 0, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
1.5)(2)
VGS(th)
2.0
—
—
6.3
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance(3)
(VGS = 10 Vdc, ID = 20 Adc)
Drain–to–Source On–Voltage (VGS = 10 Vdc)(3)
(ID = 75 A)
(ID = 20 Adc, TJ = 125
°
C)
(Cpk
≥
3.0)(2)
RDS(on)
—
7.0
9.5
m
VDS(on)
—
—
0.63
—
—
0.34
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc)
gFS
15
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
2600
2900
pF
Output Capacitance
(VDS = 25 V, VGS = 0, (Cpk
≥
2.0)(2)
(Cpk
—
1000
1100
Transfer Capacitance
≥
2.0)(2)
(Cpk
≥
2.0)(2)
—
230
275
SWITCHING CHARACTERISTICS (4)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
—
15
30
ns
Rise Time
(VDD = 25 V, ID = 75 A,
VGS = 10 V,
—
170
340
Turn–Off Delay Time
—
70
140
Fall Time
—
100
200
Gate Charge
VGS = 10 V)
—
71
100
nC
(VDS = 40 V, ID = 75 A,
—
13
—
Q2
Q3
—
33
—
—
26
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 75 A, VGS = 0)
(IS = 20 A, VGS = 0)
(IS = 20 A, VGS = 0, TJ = 125
°
C)
(Cpk
≥
10)(2)
VSD
—
—
0.97
0.80
0.68
—
1.00
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
57
—
ns
(IS = 37.5 A, VGS = 0,
—
40
—
—
17
—
Reverse Recovery Stored Charge
QRR
—
0.17
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Reflects Typical Values. Cpk = ABSOLUTE VALUE OF (SPEC – AVG) / 3 * SIGMA).
(3) For accurate measurements, good Kelvin contact required.
(4) Switching characteristics are independent of operating junction temperature.
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