- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTB75N05HD (MOTOROLA INC) TMOS POWER FET 75 AMPERES 50 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MTB75N05HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES 50 VOLTS |
| 中文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 254K |
| 代理商： | MTB75N05HD |
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
0
QG, TOTAL GATE CHARGE (nC)
V
12
t
10
8
4
0
25
50
Q1
Q2
Q3
1000
100
10
1
RG, GATE RESISTANCE (OHMS)
1
10
100
TJ = 25
°
C
ID = 75 A
75
TJ = 25
°
C
ID = 75 A
VDD = 35 V
VGS = 10 V
QT
60
50
40
30
20
10
0
VGS
VDS
2
6
td(off)
td(on)
tr
tf
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
0.9
10
20
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
0
0.2
0.4
0.6
0.8
1
80
40
0
TJ = 25
°
C
VGS = 0 V
0.1
0.3
0.5
0.7
70
60
50
30
I
t, TIME (ns)
Figure 11. Reverse Recovery Time (trr)
40
– 120
20
– 20
– 30
0
– 40
– 100
– 60
– 20
20
40
60
80
30
10
– 10
– 80
– 40
0
di/dt = 300 A/
μ
s
STANDARD CELL DENSITY
trr
HIGH CELL DENSITY
trr
tb
ta
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB75N06HD | TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB75N06 | TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS |
| MTD2955V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTD2955V | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB75N05HDT4 | 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MTB75N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB75N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail |
| MTB7671 | 制造商:Megger 功能描述:METER TEST BOX |
| MTB-7PL80 | 制造商:ITT Interconnect Solutions 功能描述:MTB-7PL80 / 095262-0006 / MICRO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。