參數(shù)資料
型號(hào)： MT46V32M8FG-6TIT:G
元件分類： DRAM
英文描述： 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封裝： (8 X 14) MM, PLASTIC, FBGA-60
文件頁(yè)數(shù)： 93/93頁(yè)
文件大?。?/td> 3632K
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc.All other trademarks are the property of their respec-
tive owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although
considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
256Mb: x4, x8, x16 DDR SDRAM
Operations
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
91
2003 Micron Technology, Inc. All rights reserved.
Figure 55:
Power-Down Mode
Notes:
1. Once initialized, VREF must always be powered within the specified range.
2. If this command is a PRECHARGE (or if the device is already in the idle state), then the
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
3. No column accesses are allowed to be in progress at the time power-down is entered.
CK
CK#
Command
Valid2
NOP
Address
CKE
DQ
DM
DQS
Valid
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS
Enter 3
power-down
mode
Exit
power-down
mode
tREFC
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T0
T1
Ta0
Ta1
Ta2
T2
NOP
Don’t Care
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Valid
1
相關(guān)PDF資料
PDF描述
MT46V32M8BG-6AT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60
M29F800FB55N3E2 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
MC12L1NZGF ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
MD00S1NCQF ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT
MD06L1NZGD ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
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