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| 型號(hào)： | MT46V32M8FG-6TIT:G |
| 元件分類： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.7 ns, PBGA60 |
| 封裝： | (8 X 14) MM, PLASTIC, FBGA-60 |
| 文件頁(yè)數(shù)： | 30/93頁(yè) |
| 文件大小： | 3632K |
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PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
34
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
DQS write postamble
tWPST
0.4
0.6
tCK
Write recovery time
tWR
15
–
ns
Internal WRITE-to-READ command delay
tWTR
1
–
tCK
Exit SELF REFRESH-to-non-READ command
tXSNR
75
–
ns
Exit SELF REFRESH-to-READ command
tXSRD
200
–
tCK
Data valid output window
n/a
tQH - tDQSQ
ns
Table 24:
Input Slew Rate Derating Values for Addresses and Commands
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tIS
tIH
Units
-75Z/-75E
0.500 V/ns
1.00
1
ns
-75Z/-75E
0.400 V/ns
1.05
1
ns
-75Z/-75E
0.300 V/ns
1.10
1
ns
Table 25:
Input Slew Rate Derating Values for DQ, DQS, and DM
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tDS
tDH
Units
-75Z/-75E
0.500 V/ns
0.50
ns
-75Z/-75E
0.400 V/ns
0.55
ns
-75Z/-75E
0.300 V/ns
0.60
ns
Table 23:
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
AC Characteristics
-75
Units
Notes
Parameter
Symbol
Min
Max
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