參數(shù)資料
型號: MT28F640J3BS-12MET
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
封裝: 10 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù): 41/54頁
文件大?。?/td> 587K
代理商: MT28F640J3BS-12MET
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
09005aef80b5a323
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F640J3_J.fm – Rev. J 2/26/04 EN
46
2004 Micron Technology. Inc.
NOTE:
1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first
edge of CE0, CE1, or CE2 that disables the device (see Table 2).
2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3. OE# may be delayed up to tACE–AOE after the first edge of CEx that enables the device (see Table 2) without
impact on tACE .
4. See Figure 19 on page 44, Transient Input/Output Reference Waveform, for VCCQ = 2.7V – 3.6V, and Figure 20 on
page 45, Transient Equivalent Testing Load Circuit, for testing characteristics.
5. When reading the Flash array, a faster tAOE applies. Non-array READs refer to status register READs, QUERY READs,
or DEVICE IDENTIFIER READs.
6. Sampled, not 100 percent tested.
Table 26:
AC Characteristics–Read-Only Operations
Notes: 1, 2, 4; extended temperature (-40C
≤ T
A ≤ +85C)
PARAMETER
SYMBOL DENSITY
VCC = 2.7V–3.6V
VCCQ = 2.7V–3.6V
UNITS
NOTES
MIN
MAX
Read/Write Cycle Time
tRC
32Mb
110
ns
64Mb
120/115
ns
128Mb
150/120
ns
Address to Output Delay
tAA
32Mb
110
ns
64Mb
120/115
ns
128Mb
150/120
ns
CEx to Output Delay
tACE
32Mb
110
ns
64Mb
120/115
ns
128Mb
150/120
ns
OE# to Non-Array Output Delay
tAOE
All
50
ns
OE# to Array Output Delay
tAOA
All
25
ns
RP# High to Output Delay
tRWH
32Mb
150
ns
64Mb
180
ns
128Mb
210
ns
CEx to Output in Low-Z
tOEC
All
0
ns
OE# to Output in Low-Z
tOEO
All
0
ns
CEx HIGH to Output in High-Z
tODC
All
35
ns
OE# HIGH to Output in High-Z
tODO
All
15
ns
Output Hold from Address,
CEx, or OE# Change, whichever occurs first
tOH
All
0
ns
CEx LOW to BYTE# HIGH or LOW
tCB
All
10
ns
BYTE# to Output Delay
tABY
All
1,000
ns
BYTE# to Output in High-Z
tODB
All
1,000
ns
CEx HIGH to CEx LOW
tCWH
All
0
ns
Page Address Access Time
tAPA
All
25
ns
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