參數(shù)資料
型號: MT28F640J3BS-12MET
元件分類: PROM
英文描述: 4M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
封裝: 10 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù): 14/54頁
文件大小: 587K
代理商: MT28F640J3BS-12MET
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
09005aef80b5a323
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F640J3_J.fm – Rev. J 2/26/04 EN
21
2004 Micron Technology. Inc.
Device Geometry Definition
Tables 11 and 12 provide important details about
the device geometry.
Table 11:
Device Geometry Definitions
OFFSET
LENGTH
DESCRIPTION
CODE
(see table 12 below)
27h
1
“n” such that device size= 2n in number of bytes
27h
28h
2
Flash device interface: x8 async, x16 async, x8/x16 async; 28:00
29:00, 28:01 29:00, 28:02 29:00
28h
29h
02
00
x8/x16
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2Ah
2Bh
05
00
32
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with
one or more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2Ch
01
1
2Dh
4
Erase Block Region 1 Information
Bits 0–15 = y; y + 1 = number of identical-size erase blocks
Bits 16–31 = z; region erase block(s) size are z x 256 bytes
2Dh
2Eh
2Fh
30h
Table 12:
Device Geometry Definition Codes
ADDRESS
32Mb
64Mb
128Mb
27h
16
17
18
28h
02
29h
00
2Ah
05
2Bh
00
2Ch
01
2Dh
1F
3F
7F
2Eh
00
2Fh
00
30h
02
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