參數(shù)資料
型號(hào): MRF6522-70R3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-600, CASE 465D-05, 2 PIN
文件頁數(shù): 6/10頁
文件大小: 336K
代理商: MRF6522-70R3
MRF6522--70R3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
Pin, INPUT POWER (WATTS)
Figure 8. Efficiency and Output Power
versus Input Power
0
Figure 9. Power Gain and Efficiency
versus Input Power
70
10
30
Figure 10. Power Gain and Efficiency
versus Input Power
20
40
50
60
20
19
η
,E
F
IC
IE
N
C
Y
(%
)
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
18
17
16
15
14
13
VDS = 26 Vdc
f = 921 MHz
η
Gps
Pin, INPUT POWER (WATTS)
80
0
20
40
50
70
2.0
η
,E
F
IC
IE
N
C
Y
(%
)
0.5
1.0
1.5
10
30
60
VDS = 26 Vdc
IDQ = 400 mA
f = 960 MHz
0
80
70
60
50
40
30
20
10
0
P o
ut
,O
U
T
P
U
T
P
O
W
E
R
(W
A
T
S
)
Pout
3.96
2.26
1.26
0.70
0.38
0.21
0.12
0.06
0.03
0.02
Pin, INPUT POWER (WATTS)
0
70
10
30
20
40
50
60
20
19
η
,E
F
IC
IE
N
C
Y
(%
)
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
18
17
16
15
14
13
VDS = 26 Vdc
f = 960 MHz
η
Gps
3.70
2.14
1.15
0.62
0.34
0.18
0.10
0.05
0.03
0.02
L
IF
E
T
IM
E
B
U
Y
L
A
S
T
O
R
D
E
R
3
O
C
T
0
8
L
A
S
T
S
H
IP
1
4
M
A
Y
0
9
相關(guān)PDF資料
PDF描述
MRF652S UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF653S UHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF6P24190HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S24140HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V10010NR4 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6522--70R3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6522-70R3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6522-70R3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF652-A 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF652S 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray