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參數(shù)資料
| 型號： | MRF652S |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PILL, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | MRF652S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 25 mA
16
V
BVCES
IC = 25 mA
36
V
BVCBO
IC = 25 mA
36
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 15 V
1.0
mA
hFE
VCE = 5.0 V
IC = 200 mA
10
150
---
Cob
VCB = 15 V
f = 1.0 MHz
9.5
15
pF
PG
ηηηη
C
VCC = 12.5 V
POUT = 5.0 W
f = 512 MHz
10
60
11
65
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF652S
DESCRIPTION:
The
ASI MRF652S is Designed for
UHF large signal, amplifier
Applications in FM equipment up to
512 MHz.
FEATURES:
Common Emitter
P
G = 10 dB at 5.0 W/512 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
2.0 A
VCBO
36 V
VCER
16 V
VEBO
4.0 V
PDISS
25 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
200 °C/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
C
B
E
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