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參數(shù)資料
| 型號(hào)： | MRF6V10010NR4 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 642K |
| 代理商： | MRF6V10010NR4 |
MRF6V10010NR4
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
Typical Pulsed Performance: VDD =50 Volts,IDQ =10 mA, Pout = 10 Watts
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 25 dB
Drain Efficiency — 69%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 10 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
ZθJC
1.6
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V10010N
Rev. 3, 7/2010
Freescale Semiconductor
Technical Data
1090 MHz, 10 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
MRF6V10010NR4
CASE 466--03, STYLE 1
PLD--1.5
PLASTIC
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
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| MRF6V10010NR4-CUT TAPE | 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET |
| MRF6V10010NT1 | 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel |
| MRF6V10250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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