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參數(shù)資料
| 型號： | MRF6V10010NR4 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 642K |
| 代理商： | MRF6V10010NR4 |
2
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID =7 mA)
V(BR)DSS
100
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID =36 μAdc)
VGS(th)
1
1.7
2.5
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 10 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.4
3.2
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =70 mAdc)
VDS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.1
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
3.38
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
9.55
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ =10 mA, Pout = 10 W Peak (2 W Avg.), f = 1090 MHz,
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23
25
28
dB
Drain Efficiency
ηD
66
69
—
%
Input Return Loss
IRL
—
--12
--8
dB
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