型號(hào): | MRF6V10010NR4 |
廠商: | FREESCALE SEMICONDUCTOR INC |
元件分類: | 功率晶體管 |
英文描述: | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
封裝: | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
文件頁數(shù): | 4/10頁 |
文件大?。?/td> | 642K |
代理商: | MRF6V10010NR4 |
相關(guān)PDF資料 |
PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MRF6V10010NR4-CUT TAPE | 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET |
MRF6V10010NT1 | 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel |
MRF6V10250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
MRF6V10250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
MRF6V12250HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |