參數(shù)資料
型號(hào)： MRF6V10010NR4
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
文件頁(yè)數(shù)： 7/10頁(yè)
文件大小： 642K
代理商： MRF6V10010NR4
6
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
TYPICAL CHARACTERISTICS
22
29
0
10
80
2
60
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
28
14
25_C
TC =--30_C
85_C
Gps
40
27
26
VDD =50 Vdc,IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
25
24
23
46
8
12
10
30
70
20
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 10 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 69%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
106
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6V10010NR4-CUT TAPE 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET
MRF6V10010NT1 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel
MRF6V10250HSR3 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V10250HSR5 功能描述:射頻MOSFET電源晶體管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V12250HR3 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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