- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96053 > MRF6S24140HSR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF6S24140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 717K |
| 代理商： | MRF6S24140HSR3 |
MRF6S24140HR3 MRF6S24140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz.
Devices are suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, VDD =28 Volts,IDQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
RθJC
0.29
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6S24140H
Rev. 3, 3/2010
Freescale Semiconductor
Technical Data
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--02, STYLE 1
NI--880S
MRF6S24140HSR3
CASE 465B--03, STYLE 1
NI--880
MRF6S24140HR3
Freescale Semiconductor, Inc., 2007--2010. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V10010NR4 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V10250HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V14300HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V2010NB | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6V2010NBR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S24140HSR5 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27015GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27015N | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 68V 3PIN TO-270 - Bulk |
| MRF6S27015NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27015NR1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。