參數(shù)資料
型號: MRF6S24140HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 717K
代理商: MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
G
ps
,P
OWER
GAIN
(d
B)
500
1
0
50
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
IDQ = 1200 mA
f = 2450 MHz
VDD =28 V
100
10
40
30
20
10
11
16
15
14
13
12
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
32 V
30 V
32 V
30 V
28 V
G
ps
,P
OWER
GAIN
(d
B)
1
0
60
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
VDD =32 V
IDQ = 1200 mA
f = 2450 MHz
100
40
30
20
11.5
14.5
14
13
12
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
13.5
12.5
50
10
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
VDD =28 V
f = 2450 MHz
1400 mA
10
15
13
12
11
G
ps
,P
OWER
GAIN
(d
B)
1
100
10
14
1000 mA
1300 mA
1200 mA
1100 mA
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =28 Vdc,Pout = 140 W CW, and ηD = 45%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
104
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
300
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