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參數(shù)資料
| 型號： | MRF5S9080NR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 753K |
| 代理商： | MRF5S9080NR1 |
MRF5S9080NR1 MRF5S9080NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 600 mA,
P
out
= 80 Watts
CW, Full Frequency Band (869-894 MHz or 921-960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 550 mA,
P
out
= 36 Watts Avg., Full Frequency Band (869-894 MHz or
921-960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200 C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79
°
C, 80 W CW
Case Temperature 80
°
C, 36 W CW
R
θ
JC
0.50
0.54
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9080N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S9080NR1
MRF5S9080NBR1
869-960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9080NBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9080NR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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| MRF5S9100N | 制造商:FREESCALE-SEMI 功能描述: |
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