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參數(shù)資料
| 型號： | MRF150 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS LINEAR RF POWER FET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-11, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MRF150 |
1
MRF150
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to150 MHz
frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Superior High Order IMD
IMD(d3) (150 W PEP) — –32 dB (Typ)
IMD(d11) (150 W PEP) — –60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
125
Vdc
Drain–Gate Voltage
125
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
300
1.71
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.6
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF150/D
SEMICONDUCTOR TECHNICAL DATA
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
CASE 211–11, STYLE 2
D
G
S
REV 8
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| MRF1500 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTOR |
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