參數(shù)資料
型號: MRF151
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: N-CHANNEL BROADBAND RF POWER MOSFET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 211-11, 4 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 184K
代理商: MRF151
1
MRF151
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 30 MHz, 50 V:
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
125
Vdc
Drain–Gate Voltage
125
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
300
1.71
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.6
°
C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF151/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 211–11, STYLE 2
D
G
S
REV 8
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