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參數(shù)資料
| 型號(hào)： | MRF158 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | TMOS BROADBAND RF POWER FET |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 93K |
| 代理商： | MRF158 |
1
MRF158
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF TMOS
Line
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
Guaranteed 28 Volt, 400 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB
Efficiency = 55% (Typical)
Grounded Source Package for High Gain and Excellent Heat
Dissipation (MRF158R)
Facilitates Manual Gain Control, ALC and Modulation
Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Excellent Thermal Stability, Ideally Suited for Class A
Operation
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
65
Vdc
±
40
Vdc
Drain Current — Continuous
0.5
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
8.0
45
Watts
mW/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
13.2
°
C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF158/D
SEMICONDUCTOR TECHNICAL DATA
2.0 W, to 500 MHz
TMOS
BROADBAND
RF POWER FET
CASE 305A–01, STYLE 2
D
S
G
REV 6
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| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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