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參數(shù)資料
| 型號(hào)： | MRF174 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-11, 4 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 168K |
| 代理商： | MRF174 |
1
MRF174
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode
. . . designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)
Excellent Thermal Stability, Ideally Suited For Class A
Operation
Facilitates Manual Gain Control, ALC and Modulation
Techniques
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
65
Vdc
Gate–Source Voltage
VGS
ID
PD
±
40
Vdc
Drain Current — Continuous
13
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF174/D
SEMICONDUCTOR TECHNICAL DATA
125 W, to 200 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
CASE 211–11, STYLE 2
D
G
S
REV 7
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