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參數(shù)資料
| 型號： | MRF173 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-11, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MRF173 |
1
MRF173 MRF173CQ
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
65
Vdc
Drain–Gate Voltage
65
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
9.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
220
1.26
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Temperature Range
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.8
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V)
ON CHARACTERISTICS
ID = 50 mA
V(BR)DSS
IDSS
IGSS
65
—
—
V
—
—
2.0
mA
—
—
1.0
μ
A
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
VGS(th)
VDS(on)
gfs
1.0
3.0
6.0
V
—
—
1.4
V
1.8
2.2
—
mhos
(continued)
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF173/D
SEMICONDUCTOR TECHNICAL DATA
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 211–11, STYLE 2
(MRF173)
CASE 316–01, STYLE 2
(MRF173CQ)
D
S
G
REV 8
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